avalanche effect
英 [ˈævəlɑːnʃ ɪˈfekt]
美 [ˈævəlæntʃ ɪˈfekt]
网络 雪崩效应; 垒增效应; 雪崩; 雪崩作用; 崩溃效应
双语例句
- Avalanche multiplication effect in semiconductors
半导体中的雪崩倍增效应 - Finally, this paper analyzes the security of this algorithm on Avalanche effect.
另外，本文从雪崩效应角度分析了算法的安全性。 - The results reveal the plasma is produced owing to the collision ionization of the He gas filled in the tube by the relativistic electron beam and its avalanche ionization effect.
结果表明，等离子体的产生是由于电子束对氦原子的碰撞电离及其雪崩效应引起的。 - The results of MEDICI simulation indicate that the technology helps improve the avalanche breakdown voltage to over 90% of parallel planar junctions, improve β 0 of low current densities by reducing parasitic effect and leakage current.
采用MEDICI模拟分析表明，该技术可将双极器件的击穿电压BVCB0提高到平行平面结的90%以上；可减小寄生效应和漏电流，有助于提高小电流β0； - Simulation results show that the space charge field in the negative point electrode system affects the electron avalanche development more greatly than that in positive point electrode system does; the effect degrees are relative to density of gas molecule.
仿真结果表明，空间电荷场对负针尖电极系统中电子崩过程的影响大于正针尖电极系统，其影响程度与气体分子密度有关。 - Such generator outputed current impulses of 7 ns wide and 6 A high from the two-stage avalanche transistor matrix using the avalanche effect.
利用晶体管的雪崩效应，通过两级雪崩晶体管阵列，得到了7ns、6A的大电流窄脉冲。 - Based on the avalanche effect, a kind of kilo-volt nanosecond pulsers has been designed, by using microwave PCB ( printed circuit board).
基于雪崩三极管雪崩效应，研制出了一种数千伏、纳秒级脉冲源。 - A generator which can produce high voltage pulse with nanosecond rise time was designed. Based on the avalanche effect, a kind of kilo-volt nanosecond pulsers has been designed, by using microwave PCB ( printed circuit board).
设计了一种基于MarxBankGenerator脉冲发生原理而设计的ns级上升沿调Q开关雪崩三极管高压脉冲发生器。基于雪崩三极管雪崩效应，研制出了一种数千伏、纳秒级脉冲源。 - We studied and made improvements on avalanche effect nanosecond impulser, and generated nanosecond UWB monocycle.
为了设计适于UWB通信用的脉冲发生器，在对各种脉冲发生器总结的基础上，改进了基于雪崩效应的纳秒级脉冲发生器，产生了纳秒级单脉冲波形。 - From the experiment result, it is found that avalanche ionization and self-focusing effect dominate the damage process in transparent dielectric.
结果表明：在多纵模激光的作用下，透明光学材料破坏是电离击穿与自聚焦效应综合作用的结果。 - The dependence test results accorded with the demands. Each new algorithm was complete; its degree of avalanche effect was about 0.9993; its degree of strict avalanche criterion was 0.992 or so.
依赖性测试表明：四个新算法是完备的，其雪崩效应度约为0.9993，其严格雪崩准则度约为0.992。